基片温度对TiO_2薄膜的微观结构和紫外光电特性的影响  

Effect of Substrate Temperature on the Microstructure of TiO_2 Thin Films and UV Photoelectric Properties

作　　者：刘子丽[1] 肖峻[1] 蒋向东[2] 孙继伟[2] 

机构地区：[1]西南民族大学电气信息工程学院,成都610041 [2]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2010年第2期135-138,共4页Chinese Journal of Electron Devices

摘　　要：为了制备具有紫外光电特性的TiO2薄膜,采用直流磁控溅射(DC)的方法在不同温度的玻璃基片上制备了TiO2薄膜。通过用X射线衍射(XRD)、扫描电子显微镜(SEM)、X-射线能谱仪(EDS)测试薄膜的晶体结构、表面形貌和薄膜组成成分。结果表明:当基片温度在250℃及以上时,制备出具有锐钛矿结构的TiO2薄膜,并且有较好化学计量比。TiO2薄膜电阻在紫外光照射下的响应时间随基片温度的升高而减少。In order to prepare the UV photoelectric characteristics of TiO2 thin films,TiO2 thin films on glass substrate were prepared by DC magnetron sputtering（DC） method at different substrate temperature.XRD,SEM,EDS were used to analyze crystal structure,surface topography and constituents.It was found that,when the substrate temperature was 250 ℃ and above,TiO2 thin films with anatase phase structure were prepared,and had a better stoichiometric ratio.The response time of TiO2 thin film resistors to UV irradiation was decreased with the substrate temperature.

关 键 词：TIO2薄膜 基片温度 直流磁控溅射 紫外光电特性 

分 类 号：O484[理学—固体物理]