一种采用砷化镓pHEMT工艺的超宽带DC-40GHz4位单片数字衰减器(英文)  

An Ultra Broadband DC-40GHz 4-Bit GaAs pHEMT MMIC Digital Attenuator

作　　者：文星[1] 郁发新[2] 孙玲玲[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018 [2]浙江大学航空航天学院航天电子工程研究所,杭州310029

出　　处：《电子器件》2010年第2期150-153,共4页Chinese Journal of Electron Devices

基　　金：Project supported by the Key Innovation Fund of China Association for Science and Technology(CAST20080503)

摘　　要：介绍了一种超宽带DC-40GHz的4位单片数字衰减器。该衰减器采用0.25μm砷化镓pHEMT工艺制造。据我所知,这种衰减器是至今国内文献报道中带宽最宽的。它通过采用适当的结构来得到超宽的带宽、低插入损耗以及高衰减精度。该衰减器具有1 dB的衰减步进和15 dB的衰减动态范围,插入损耗在40 GHz时小于5 dB,全衰减态及全频带内的输入输出回波损耗大于12 dB。This Paper Proposes a Design Method of a Broadband 4-Bit Monolithic Microwave Integrated Circuit（MMIC） Digital Attenuator.It is fabricated with 0.25 μm GaAs pseudomorphic High Electron Mobility Transistors（pHEMT） process.The attenuator＇s DC-40GHz bandwidth is the broadest one yet reported in domestic literatures to the best of my knowledge.Low reference state insertion loss and high attenuation accuracy are also obtained by using appropriate configuration.This attenuator has 1 dB resolution and 15 dB dynamic range.The reference state insertion loss is less than 5 dB at 40 GHz.The input and output return losses are better than 12 dB over all attenuation states and operating frequencies.

关 键 词：超宽带 GAAS PHEMT 数字衰减器 

分 类 号：TN715[电子电信—电路与系统] TN454