SOI技术的发展思路  

Development Strategies with SOI Technology

作　　者：陈昕[1] 

机构地区：[1]同济大学电子科学与技术系,上海201804

出　　处：《电子器件》2010年第2期193-196,共4页Chinese Journal of Electron Devices

摘　　要：对SOI技术的发展情况进行了概述。在此基础上,提出了新形势下SOI技术的发展思路。为了充分发挥SOI技术的优势,主要的思路是对影响器件稳定性的因素采取抑制方法、通过新结构和新材料的研究来应对硅基集成电路的固有弱点、通过关键技术攻关来应对SOI技术应用于射频及模拟和M/S电路时的物理模型问题、通过创新来推进SOI技术与新技术领域的融合。The evolving situation of SOI technology is summarized.Based on that,evolving scheme of SOI technology in the new situation is submitted.In order to make full use of advantages of SOI technology,main strategies are set on depressing approach against factors that influence device＇s stability,by research on new structure and material to handle native shortcomings of Si-based IC,by tackling key problems to implement physical modeling of SOI technology when applied in RF,analog and M/S circuits,by innovation to push SOI technology joining into new emergency technology areas.

关 键 词：SOI(siliconon Insulator) 浮体效应 自加热效应 阈值漂移 辐射加固 

分 类 号：TN386[电子电信—物理电子学]