High power, longevity gallium arsenide photoconductive semiconductor switches  

作　　者：YANG HongChun CUI HaiJuan SUN YunQing ZENG Gang WU MingHe 

机构地区：[1]Institute of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China

出　　处：《Chinese Science Bulletin》2010年第13期1331-1337,共7页

基　　金：supported by the National Natural Science Foundation of China (Grant No.10804016);the Key Laboratory Fund of Transient of Optics and Photonics of China (Grant No.YAK200501)

摘　　要：A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.A GaAs Photoconductive Semiconductor Switch （PCSS） with a 3-mm gap between the two opposed contact electrodes was de- veloped with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation pro- tection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 p.J in optical energy per shot and 1 kHz pulse repetition rate （PRR）. The GaAs PCSS can last for more than 3.6×10^6 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates （VCR） and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.

关 键 词：砷化镓材料 光电开关 半导体开关 高功率 长寿命 砷化镓半导体 机械结构设计 脉冲持续时间 

分 类 号：TN25[电子电信—物理电子学]