La基高k栅介质的研究进展  

Development of La-Based High-k Gate Dielectric

作　　者：陈伟[1,2] 方泽波[2] 马锡英[2] 谌家军[1] 宋经纬[1,2] 

机构地区：[1]西华师范大学物理与电子信息学院,四川南充637002 [2]绍兴文理学院物理与电子信息系,浙江绍兴312000

出　　处：《微纳电子技术》2010年第5期282-289,共8页Micronanoelectronic Technology

基　　金：国家自然科学青年基金项目(60806031);国家自然科学基金项目(60776004);绍兴市重点科研项目(2007A21015)

摘　　要：SiO2作为栅介质已无法满足MOSFET器件高集成度的需求,高k栅介质材料成为当前研究的热点。综述了高k栅介质材料应当满足的各项性能指标和研究意义,总结了La基高k栅介质材料的最新研究进展,以及在改正自身缺点时使用的一些实验方法,指出了有可能成为下一代MOSFET栅介质的几种La基高k材料。La基高k材料的研究为替代SiO2的芯片制造工艺提供优异的候选材料及理论指导,这是一项当务之急且浩大的工程。SiO2 will no longer meet the requirements of high integration of MOSFET devices,and high-k materials as gate dielectrics become a research focus.The satisfied various performance indexes and the research significance of high-k gate dielectric materials are described.The latest developments of La-based high-k gate dielectric materials are summarized,and some experimental methods are used to correct the drawbacks of La-based high-k gate dielectric materials.Several La-based high-k materials of the next generation of MOSFET gate dielectrics are predicted.The researches of La-based high-k materials for replacing SiO2 in the chip process provide excellent candidate materials and theoretical guidance,and this is an urgent and vast project.

关 键 词：高K栅介质 La基氧化物 二氧化硅 金属氧化物半导体场效应晶体管 摩尔定律 

分 类 号：O484.4[理学—固体物理]