低温漂高PSRR新型带隙基准电压源的研制  

Research and Development Design of Bandgap Voltage Reference with Low Temperature-Drift and High PSRR

作　　者：吴蓉[1] 张娅妮[1] 荆丽[1] 

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070

出　　处：《半导体技术》2010年第5期503-506,共4页Semiconductor Technology

基　　金：兰州市科技发展计划资助项目(2009-1-1)

摘　　要：利用带隙电压基准的基本原理,结合自偏置共源共栅电流镜以及适当的启动电路,设计了一种新型基准电压源。获得了一个低温度系数、高电源抑制比的电压基准。通过对输出端添加运算放大器,把带隙基准电路产生的1.2 V电压提高到3.5 V,提高了芯片性能。用Cadence软件和CSMC的0.5μm CMOS工艺进行了仿真,结果表明,当温度在-20～+120℃,温度系数为9.3×10-6/℃,直流时的电源抑制比为-82 dB。该基准电压源能够满足开关电源管理芯片的使用要求,并取得了较好的效果。A new voltage reference applicable for switching power supply is designed and simulated.The voltage reference with low temperature-drift and high PSRR was acquired using traditional principle of bandgap reference together with the self-biased casecode current mirror structure and setup circuit.The reference voltage was improved from the traditional value of 1.2 V to 3.5 V by applying an operational amplifier at output terminal.The circuit was simulated with Cadence tool and 0.5 μm CMOS model.The results show that the temperature coefficient is 9.3×10^-6/℃ over the temperature range of-20～＋120 ℃ and PSRR is-82 dB at DC.The measured results indicate that the designed voltage reference is prospective for application in switching power management circuit.

关 键 词：基准电压源 自偏置 共源共栅 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]