电荷耦合器件电离辐射损伤的模拟试验研究  

Cobalt-60 Experiment on Ionization Radiation Effects of Charge Coupled Devices

作　　者：唐本奇[1] 王祖军[1] 刘敏波[1] 肖志刚[1] 张勇[1] 黄绍艳[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《电子学报》2010年第5期1192-1195,共4页Acta Electronica Sinica

基　　金：国防预研项目(No.51311060403)

摘　　要：利用钴-60源,在不同工作与辐照条件下,开展电荷耦合器件电离辐射损伤模拟试验,分析高低剂量率、器件偏置对器件暗电流信号增大和哑元电压漂移的影响,比较电荷耦合器件光敏单元、输出放大器总剂量效应的敏感性,研究辐射敏感参数与失效模式的差异.为建立电荷耦合器件电离辐射效应规范化的模拟试验与加固评估方法,提供技术基础.This paper describes the experiment on ionization radiation effects of device performance including the increase of dark current signal and the voltage shift of output amplifier of charge coupled devices （CCDs） by Cobalt-607 source under different ionizing dose rate and bias cases. It is analyzed about the ionization damage sensitivity of image sensor elements and output amplifier section. These studies have laid a good foundation for the development of standard experiment process and assessment method on ionization radiation effects of charge-coupled devices.

关 键 词：电荷耦合器件 电离辐射效应 模拟试验 

分 类 号：TN99[电子电信—信号与信息处理]