以(10■5)面为籽晶的6H-SiC单晶生长与缺陷研究  

Growth and Defect Characterization of 6H-SiC Single Crystal Seeded(10■5) Plane

作　　者：高玉强[1] 彭燕[1] 李娟[1] 陈秀芳[1] 胡小波[1] 徐现刚[1] 蒋民华[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2010年第2期287-290,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50802053,No.50721002);教育部科技创新工程重大项目(No.707039);973国家重大科学研究计划项目(No.2009CB930503)

摘　　要：本文以升华法实现了以(10■5)面为籽晶的6H-SiC单晶扩径生长,获得最大直径达33 mm的6H-SiC单晶。采用光学显微镜观察晶体纵切片,发现源于包裹体的沿生长方向延伸的微管发生转弯现象,转向后在(0001)面内延伸,同时籽晶内沿c轴延伸的微管也终止于生长界面。通过光学显微镜观察单晶生长表面形貌,发现(10■n)面生长,随着n的增大层错密度逐渐减小,这与横切片的腐蚀结果相对应;随着微管的终止和层错的减少得到了无微管的高质量单晶区。The radial expansion growth of 6H-SiC seeded（1015） plane has been achieved by sublimation method.The largest diameter of single crystal reached to 33 mm.Optical micrographs of the longitudinal-cut slices show that micropipes along the growth direction which originate from inclusions chang their direction and then extend on the（0001） plane.It was also observed that the micropipes propagating along the c-axis in seed ended in the interface of seed/crystal.The as-grown surface morphology of crystal was also observed by microscopy.It was found that for a（101n） plane,the density of stacking faults decreased with the increase of n value.This result is confirmed by the etching morphology of the cross section slices.A high-quality single crystal area is gained due to the termination of micropipes and the decrease of density of stacking fault.

关 键 词：升华法 SIC单晶 微管 层错 

分 类 号：O771[理学—晶体学]