α-Al_2O_3衬底上6H-SiC薄膜的SSMBE外延生长  

Epitaxial Growth of 6H-SiC Thin Films on α-Al_2O_3 Substrates by SSMBE

作　　者：康朝阳[1] 刘忠良[1,2] 唐军[1] 陈香存[1] 徐彭寿[1] 潘国强[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029 [2]淮北师范大学物理与电子信息学院,淮北235000

出　　处：《人工晶体学报》2010年第2期308-312,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50572100;No.50872128);安徽省高等学校省级自然科学研究项目(KJ2010B189)

摘　　要：采用固源分子束外延(SSMBE)技术,在α-Al2O3(0001)衬底上直接制备出了SiC薄膜。利用反射式高能电子衍射(RHEED)、Raman光谱、X射线扫描、傅里叶变换红外光谱(FT-IR)、X射线衍射(XRD)等实验技术,对生长的样品的结构和结晶质量进行了表征。结果表明:在蓝宝石衬底上生长出了结晶性能良好的6H-SiC薄膜,且薄膜中存在较小的压应力,这种压应力是由薄膜与衬底之间热膨胀系数的差异所致。SiC thin films have been epitaxially grown on α-Al2O3（0001）substrates by solid-source molecular beam epitaxy（SSMBE）.The structure and crystalline quality of the films were characterized with reflection high energy electron diffraction（RHEED）,Raman spectrum,X-ray  scan,Fourier transform infrared spectroscope（FT-IR） and X-ray diffraction（XRD）.These results demonstrate that the 6H-SiC films with good crystalline quality are epitaxially grown on the sapphire substrates,and the smaller compressive stress exists in the films because of the difference of the thermal expansion coefficient between the films and the substrates.

关 键 词：SIC薄膜 蓝宝石衬底 固源分子束外延 

分 类 号：O484[理学—固体物理]