硅上超高真空CVD生长硅锗外延层及其特性研究  

Characterization and Growth of Germanium Silicon Epitaxial Layers by UHV/CVD

作　　者：叶志镇[1] 黄靖云[1] 卢焕明[1] 姜小波[1] 汪雷[1] 赵炳辉[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《Journal of Semiconductors》1999年第1期30-34,共5页半导体学报（英文版）

基　　金：国家自然科学基金;国家教委"跨世纪优秀人才"培养计划资助

摘　　要：我们利用自行研制的ＵＨＶ／ＣＶＤ技术在直径３英寸的硅衬底上生长了锗硅外延层，并进行了实时掺杂生长．采用Ｘ射线双晶衍射和二次离子质谱技术确定了外延层的质量与组分，利用扩展电阻仪对外延层电阻率进行了表征，研究了生长特性和材料特性．由此获得生长速率及组分与源气体流量的关系曲线，发现生长速度随Ｇｅ组分的增加而降低，以氢气为载气的Ｂ２Ｈ６对锗硅合金的生长速率有促进作用．Abstract Germanium silicon epitaxial layers on silicon substrates of 3 inch diameter are successfully grown by ultra high vacuum chemical vapor deposition (UHV/CVD), and a real time boron doping of epilayers is realized. Germanium silicon strained layers are characterized by double crystal X ray diffraction (DCXRD), secondary ion mass spectroscopy (SIMS), and spreading resistance (SPR). The germanium content in epilayers is homogeneous. The oxygen concentration in epilayers is lower than that in substrates. No oxygen peak in the interface is found. The germanium content curve and growth rate versus germane silane flow ratio are plotted, they show that the growth rate is reduced with increasing of germanium content and the growth rate of epilayers is obviously increased in the boron doped epilayers.

关 键 词：锗硅材料 硅 CVD 外延生长 

分 类 号：TN304.054[电子电信—物理电子学] TN304.12