射频溅射Sn薄膜的工艺研究  

Research on the Technology of Thin Film of the RF-Sputtered Sn

作　　者：蒙冕武[1] 邓希敏[1] 刘明登[1] 

机构地区：[1]广西师范大学新技术新材料研究所

出　　处：《传感器技术》1999年第1期7-9,12,共4页Journal of Transducer Technology

基　　金：国家自然科学基金

摘　　要：采用正交试验方法研究了射频溅射的工艺因素对Ｓｎ膜形成过程的影响，得到了射频溅射制备Ｓｎ膜新工艺的最佳条件。Ｘ－射线衍射及ＳＥＭ实验结果表明在该工艺条件下得到的Ｓｎ膜为非常细小均匀的β－Ｓｎ的晶体结构。The effects of the technology factors such as sputtering power,sputtering time and sputtering pressure were investigated by means of orthogonal test method and the best technology on manufacturing the thin film of Sn. The X-ray and SEM experiments indicated that the thin film of Sn is tiny and uniform β-Sn crystal structure by use of this new technology .

关 键 词：射频溅射 二氧化锡 半导体薄膜技术 

分 类 号：TN304.055[电子电信—物理电子学] TN304.21