电导法测量Si_(1-x)Ge_x/Si量子阱的能带偏移  

Band Offset Measurements of Si 1- x Ge x /Si Quantum Wells Studied by Conductance Technique

作　　者：张胜坤[1] 蒋最敏[1] 秦捷[1] 林峰[1] 胡冬枝[1] 裴成文[1] 陆方 

机构地区：[1]复旦大学表面物理国家重点实验室

出　　处：《Journal of Semiconductors》1999年第2期139-142,共4页半导体学报（英文版）

摘　　要：本文分析了一个单量子阱的随频率变化的Ｇ－Ｖ特性，提出用电导法测量量子阱的能带偏移．通过对一个Ｓｉ１－ｘＧｅｘ／Ｓｉ单量子阱的实验Ｇ－Ｖ曲线的分析。Abstract The frequency dependent conductance voltage characteristics of a sample with a single quantum well included are studied. A conductance method is proposed to measure the band offsets of quantum wells. The technique is verified by analyzing the experimental G V curves of a Si/Si 1- x Ge x /Si quantum well.

关 键 词：量子阱 能带偏移 电导法 硅 锗 测量 

分 类 号：TN304.12[电子电信—物理电子学] O471.5[理学—半导体物理]