Sol-Gel法制备的铁电薄膜和Pt/Ti下电极的反应离子刻蚀技术  

Reactive Ion Etching of Sol Gel Derived PZT Ferroelectric Thin Films and Pt/Ti Bottom Electrode

作　　者：陈峥[1,2] 汤庭鳌[1,2] 邹斯洵 

机构地区：[1]复旦大学电子工程系 [2]ASIC和系统国家重点实验室

出　　处：《Journal of Semiconductors》1999年第2期172-176,共5页半导体学报（英文版）

基　　金：国家自然科学基金;上海市应用物理中心;AM公司基金;"863"项目资助

摘　　要：为制备Ａ１／ＰＺＴ／Ｐｔ／Ｔｉ电容，研究了采用ＳＦ６／Ａｒ等离子体对Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３及Ｐｔ／Ｔｉ底电极进行反应离子刻蚀（ＲＩＥ）的技术．较系统地研究了ＲＦ功率，ＳＦ６／Ａｒ流量比及气压对刻蚀速率的影响，找到了对ＰＺＴ及Ｔｉ进行ＲＩＥ的优化工艺条件．在不同的条件下得到对ＰＺＴ的刻蚀速率为２～７ｎｍ／ｍｉｎ；采用纯Ａｒ气体时Ｐｔ的刻蚀速率为２～６ｎｍ／ｍｉｎ；Abstract To obtain a Al/PZT/Pt/Ti ferroelectric capacitor, Reactive Ion Etching (RIE) of Pb(Zr, Ti)O 3 ferroelectric thin film and Pt bottom electrode with SF 6/Ar plasmas is processed in this work. Authors did many experiments to study the etch rate for PZT and Pt under different RF power, SF 6/Ar gas flow ratio and gas pressure. It’s shown that there exists an optimum power, SF 6/Ar gas flow ratio and pressure to etch PZT and Pt, respectively. Etch rates of the order of 2～7nm/min for PZT are obtained under different conditions. For Pt electrode, etch rates of the order of 2￣6nm/min are obtained when pure Ar is used as etch gas. In the case of Ti layer, it could be etched by HCl and H 2O 2 solution easily.

关 键 词：铁电薄膜 反应离子刻蚀 SOL-GEL法 PZT 铂/钛 

分 类 号：TN304.9[电子电信—物理电子学] TN405.983