常压 MOCVD 法生长 ZnSe/ZnS_xSe_(1-x)应变层超晶格  

Growth of ZnSe/ZnS_xSe_(1-x) Strained-Layer Superlattices by Atmospheric Pressure MOCVD

作　　者：范广涵[1] 关郑平 江风益 范希武[1] 宋士惠[1] 

机构地区：[1]中国科学院长春物理研究所

出　　处：《人工晶体学报》1990年第1期10-15,共6页Journal of Synthetic Crystals

摘　　要：本文首次报导以常压 MOCVD 法,用二甲基锌、硒化氢、硫化氢为源,在砷化镓衬底上外延生长 ZnSe/ZnS_XSe_(1-X) 应变层超晶格结构。讨论了气相组分对外延层组分的影响。用 X 射线衍射法和光荧光法鉴定了超晶格结构。ZnSe/ZnS_xSe_(1-x) strained-layer superlattices(SLS)were grownon the(100)GaAs substrates by metal-organic chemical deporsition(MOCVD)at atmospheric pressure for the first time,and their periodical structures have beenascertained by observing X-ray diffraction satellites.The exciton emission peakposition in their photoluminescence spectrum at 77K shifts towards the higherenergy side with the decrease of the well width,showing the quantum sizeeffect of such superlattices As compared with the ZnSe/ZnS superlattice theZnSe/ZnS_(0.1)Se_(0.9) strained-layer superlattice has a much stronger and sharperexciton emission peak owing to the better lattice matching between layers.

关 键 词：应变层 超晶格 ZNSE 锌 ZnSxSe1-x 

分 类 号：O641.241[理学—物理化学]