SPPs光刻曝光显影模拟研究  

Resist Exposure Developing Simulation Study of SPPs Lithography

作　　者：郑宇[1,2] 王景全[1] 李敏[1] 牛晓云[1] 杜惊雷[1] 

机构地区：[1]四川大学物理科学与技术学院,成都610064 [2]武警成都指挥学院教研部,成都610213

出　　处：《光子学报》2010年第5期792-796,共5页Acta Photonica Sinica

基　　金：国家自然科学基金(60676024);教育部博士点基金(20060610006)资助

摘　　要：基于薄层抗蚀剂的曝光模型,建立了普遍适应于表面等离子体激元光刻的抗蚀剂曝光模型.选用AZ1500和AR3170两种抗蚀剂对表面等离子体激元干涉光刻曝光显影过程进行计算对比,获得表面等离子体激元光刻显影的最终轮廓.由此得出工艺优化的条件,对表面等离子体激元光刻的进一步工作和实验开展有着重要的意义.Based on the models of thin-layer resist exposure and developing,the SPPs resist exposure model is established.Two kinds of resist of AZ1500 and AR3170 are chosen to simulate the process of exposure and developing,and the final profile of SPPs lithography is obtained.Some craft optimization conditions are also conclucled.The research results are for experiment and future work of SPPs lithography.

关 键 词：SPPs光刻 干涉光刻 曝光潜像 显影轮廓 

分 类 号：O436.1[机械工程—光学工程]