二氧化硅的干法刻蚀工艺研究  

Research of the Etching Process for Silicon Dioxide

作　　者：严剑飞[1] 袁凯[1] 太惠玲[1] 吴志明[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《微处理机》2010年第2期16-18,22,共4页Microprocessors

摘　　要：主要研究了二氧化硅的干法刻蚀工艺。运用反应离子刻蚀设备(R IE150×4)进行了一系列的刻蚀实验,采用不同的工艺条件对二氧化硅进行选择刻蚀工艺研究,得出了不同工艺条件对应的刻蚀速率、均匀性、选择比等刻蚀参数,并对结果进行了比较与分析,得到了相对最佳的工艺条件。This paper mainly focuses on the dry etching process of Silicon oxide（SiO2）.A series of etching experiments were carried out with reactive ion etching system.Silicon oxide was etched using different etching process,and the etching rate,uniformity,selectivity were obtained under different process conditions.The results were compared and analyzed,and the optimum conditions were chosen.

关 键 词：反应离子刻蚀 二氧化硅 最佳工艺条件 

分 类 号：TN305.7[电子电信—物理电子学]