双极型晶体管线路瞬态γ辐照效应的模拟计算和实验验证  

Simulation and Experiment of Transient γ Radiation Effects on the Bipolar Transistor Circuit

作　　者：唐本奇[1] 吴国荣[1] 李国政[1] 

机构地区：[1]西北核技术研究所

出　　处：《核电子学与探测技术》1999年第1期9-14,共6页Nuclear Electronics & Detection Technology

摘　　要：在ＰＣ上开发了双极型晶体管电路瞬态γ辐照效应的模拟计算程序Ｍ－ＴＲＡＣＩＩ，建立了相应器件模型参数的测试方法，并进行双极型晶体管线路瞬态γ辐照效应实验验证工作；计算结果与实测结果符合得较好，说明该模拟技术和实验方法是可行的和可靠的。In this paper, we set forth the equivalent models of transient γ radiation effects on pn junction diodes and bipolar transistors, the methods for determining its parameters, and the calculated transient γ radiation effects on the bipolar transistor circuit. The comparison between program simulation and experimental test results demonstrated close agreement at the indicated radiation levels. Those demonstrated the technique of modeling semiconductor devices, the parameter′s measurement and the numerical methods to be available and reliable.

关 键 词：瞬态γ辐照效应 晶体管模型 参数提取 

分 类 号：TN320.6[电子电信—物理电子学]