Ni掺杂对Cu_3N薄膜结构与性能的影响  

Effect of Ni Doping on the Structure and Properties of Copper Nitride thin Films

作　　者：陈小松[1] 尹玉丽[1] 张昌印[1] 吴绍彬[1] 杨磊[1] 黄致新[1] 

机构地区：[1]华中师范大学物理科学与技术学院,武汉430079

出　　处：《信息记录材料》2010年第3期52-55,共4页Information Recording Materials

基　　金：国家大学生创新性实验项目基金资助

摘　　要：采用射频反应磁控溅射方法在玻璃基底上制备了Ni掺杂Cu3N薄膜,并研究了Ni掺杂对Cu3N的结构、电学性能和光学性能的影响。研究发现:Ni的加入使得Cu3N薄膜的(111)晶面向小角度偏移;随着Ni含量的增加,Cu3N薄膜的电阻率从1450×10-6Ω.cm减小到184×10-6Ω.cm,光学能隙从1.09eV增加到1.52eV。Ni-doped copper nitride films were prepared on glass substrates by reactive radio magnetron sputtering method,and the effect of Ni doping on the structure,the electrical and the optical properties of the thin films were studied. The results show that. the films changes the （111） plane to lesser angles with the addition of Ni;With the increase of Ni-doped content, the e- lectrical resistivity decreases from 1450 × 10-61Ω. cm to 184× 10-6Ω. cm, and the optical band gap increases from 1.09eV to 1.52eV.

关 键 词：Cu3N薄膜 Ni掺杂 电学性能 光学能隙 

分 类 号：TQ58[化学工程—精细化工]