MOCVD化学反应路径分析及数值模拟  

Analysis and Simulation of MOCVD Chemical Reaction Path

作　　者：陈景升[1] 左然[1] 于海群[1] 彭鑫鑫[1] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013

出　　处：《科学技术与工程》2010年第16期3951-3953,3957,共4页Science Technology and Engineering

摘　　要：针对GaN薄膜沉积过程中涉及到的复杂的化学反应,依据GaN沉积的4个基本要素,提出MMG是GaN薄膜沉积的主要反应前体,并在TMG的气相分解路径中引入NH2基团。通过对表面反应机理的分析,提出了4条简化的表面反应路径。利用上述反应路径,对典型的垂直式MOCVD反应器进行CFD模拟。结果表明,采用作者提出的反应路径所获得的GaN沉积速率与文献中的实验数据基本吻合。The complex chemical reaction process is involved in the GaN thin film deposition process. Based on the 4 basic elements in GaN deposition,MMG is the main reaction precursor is proposed and the NH2 groups is introduced. Through the surface reaction mechanism analysis,4 simplified surface reaction paths isproposed. By using the above reaction paths,and by choosing a typical vertical MOCVD reactor,the GaN growth rate is numerically simulated and compared with the experimental values from the literature. The simulated results agree well with the experimental ones.

关 键 词：GAN生长 MMG 反应路径 数值模拟 

分 类 号：O484.1[理学—固体物理]