脉冲激光沉积AlN薄膜的结构表征和性能研究进展  

Development of Structural Characterization and Properties of AlN Film Prepared by Pulsed Laser Deposition

作　　者：谢尚昇[1] 何欢[1] 符跃春[1] 

机构地区：[1]广西大学材料科学与工程学院有色金属及材料加工新技术教育部重点实验室,南宁530004

出　　处：《材料导报》2010年第11期45-49,共5页Materials Reports

基　　金：广西自然科学基金项目(桂科基0731005)

摘　　要：脉冲激光沉积法(PLD)以其低温成膜优势被公认为是宽禁带半导体AlN薄膜的优选制备方法。获得高质量的AlN薄膜需要最佳的薄膜/衬底匹配和工艺参数。综述了各种常见异质外延衬底与AlN薄膜的取向关系,分析了影响薄膜质量的工艺因素,介绍了薄膜在电、光、热方面的性能研究现状,并指出了今后工作的方向。Pulsed laser deposition（PLD） has become an optimized technique to fabricate the wide bandgap AIN semiconductor film due to its low deposition temperature. Optimal film/substrate matching and processing parameters are needed to obtain high-quality AIN films. In this paper, the orientation relationship between several hetero substrates and AIN films is reviewed. The effect of processing parameters on the film quality is analyzed. The electronic, optical, thermal properties of AIN films are introduced. The direction of further research is also briefly discussed.

关 键 词：脉冲激光沉积 ALN薄膜 衬底 工艺参数 性能 

分 类 号：TN713.1[电子电信—电路与系统]