SiCOI MESFET的特性分析  

Characteristics of SiCOI MESFET

作　　者：王旸[1] 雷天民[1] 张智[1] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071

出　　处：《电子科技》2010年第6期19-21,共3页Electronic Science and Technology

摘　　要：提出了一种新的器件结构-SiCOI结构,即硅衬底上外延SiC制造MESFET器件,并建立了SiCOIMESFET器件结构与模型。使用ISE-TCAD二维器件仿真软件,对SiCOI MESFET的电学特性进行模拟分析。结果表明,通过调整器件结构参数,例如门极栅长、有源层掺杂浓度、有源区厚度等,对器件转移特性、输出特性有较大影响。同时,还对SiCOI MESFET器件的击穿特性进行了模拟。这些电学特性数据为进一步设计及优化SiCOI MESFET器件提供理论基础。A 6H-SiC SiCOI device structure is presented,and the MESFET structure model is established.By employing a 2D device simulator ISE-TCAD,simulations are made of electrical characteristics of SiCOI MESFET＇s.Results show that structure parameters such as gate length,doping concentration,and thickness of active layer have a great effect on the DC characteristics of SiCOI MESFET＇s.The breakdown characteristic of SiCOI MESFET is also studied by using ISE-TCAD.Simulated data provide a basis for further designing and optimizing the device structure of SiCOI MESFET.

关 键 词：SICOI MESFET 结构参数 

分 类 号：TN304.2[电子电信—物理电子学]