双极型晶体管高功率微波的损伤机理  

HPM damage mechanism on bipolar transistors

作　　者：范菊平[1,2] 张玲[1] 贾新章[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件重点实验室,西安710071 [2]西北核技术研究所,西安710024

出　　处：《强激光与粒子束》2010年第6期1319-1322,共4页High Power Laser and Particle Beams

基　　金：模拟集成电路国家重点实验室基金项目(9140C09040206DZ0101)

摘　　要：在模拟集成电路的抗高功率微波加固研究中,对电路中的单个晶体管进行高功率微波损伤机理研究。对晶体管进行洲入微波损伤效应实验和失效分析,得到了双极型晶体管损伤的基本规律。损伤效应实验采用注入法,分别从晶体管的三极注入微波,得到了损伤结果。对样品进行的失效分析探明了器件的损伤部位和失效机理。结果表明,高功率微波注入主要造成B-E结的退化和损伤;从基极注入微波最易损伤晶体管,而从集电极注入则相反。In the study of anti-HPM reinforcement of analog integrated-circuits,the damage mechanism of a single BJT in the tested ICs is researched first.The research is composed of effect experiments and failure analysis,in order to get the damage mechanism of BJTs.In the experiments,microwave energy is injected into the BJT from the base,the emitter and the collector respectively,till the transistors are damaged.The damage threshold,degradation and failure of tested transistors are observed.Failure analysis of damaged transistors compare the damaged position and the failure mode of damaged transistors,showing that transistors have the maximum vulnerability to microwave injected from the base,and the minimum vulnerability to microwave from the collector.

关 键 词：高功率微波 晶体管 损伤 失效分析 

分 类 号：TN015[电子电信—物理电子学]