注入温度对氧注入制成的SOI膜质量的影响  

EFFECT OF IMPLANTATION TEMPERATURE ON THE QUALITY OF SOI FILMS SYNTHESIZED BY OXYGEN ION IMPLANTATION

作　　者：董顺乐[1] 丛培杰[1] 

机构地区：[1]山东大学物理系

出　　处：《山东大学学报（自然科学版）》1990年第2期161-165,共5页Journal of Shandong University(Natural Science Edition)

摘　　要：选择不同的靶温进行高能大剂量氧离子注入,并进行了高温退火。利用离子背散射技术、透射电子显微镜和掠角 x 射线衍射分析样片,发现:低温下注入能产生非晶层,退火后有多晶硅生成。提高靶温能有效地减小损伤,特别是440℃注入的样片经过退火表面硅层很接近未注入硅片。SOI(Silicon On Insulator)were synthesized by a high dose oxygen ion implanlation at differertt temperatures Anneal was in nitrogen atmosphere at 1180℃ for 2 hours.Rutherford Backscattering Spectroscopy (RBS),Gross sectional transmission electron microscopy and glancing angle X-ray diffr- action were used We found:amorphour silicon layer was formed during implantation at lower implantation iemperatures.After annealing a part of amorphour silicon changed into multi-crystal silicon.As the implantation temperature rises irradiation damage decreases.Especially the surface layer of annealed samples implanted at 440℃ is close to unimplanted silicon.

关 键 词：SOI 离子注入 温度 背散射 氧离子 

分 类 号：TN305.3[电子电信—物理电子学]