单带差超晶格中ZnS薄膜的制备及其性质  

Preparation and performance of ZnS thin films used in single offset superlattice

作　　者：孟奕峰[1] 黎兵[1] 冯良桓[1] 李愿杰[1] 黄杨[1] 王洪浩[1] 刘才[1] 颜璞[1] 

机构地区：[1]四川大学材料学院,成都610064

出　　处：《四川大学学报（自然科学版）》2010年第3期611-614,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(60506004);国家高技术研究与发展计划(2003AA513010)

摘　　要：利用射频磁控溅射法制备了单带差超晶格中ZnS薄膜.通过XRD和AFM的观察,对其结构进行了研究,并确定了制备均匀致密的多晶ZnS薄膜的最佳条件.此外,对300℃和400℃衬底温度下的ZnS薄膜的光透过谱和吸收谱进行了对比,计算出了溅射法制备的ZnS薄膜的光能隙分别为3.82 eV、3.81 eV,与理论值一致.这种高透过率、均匀致密的ZnS薄膜可用于研制新型高效率的单带差超晶格ZnS/CdS/P-CdTe太阳电池.The ZnS single-layer polycrystal thin films used in single offset superlattice were prepared by magnetron sputtering technique. The structure of these thin films was studied through the XRD and AFM observations, and the best conditions of preparing the uniform dense polycrystal ZnS films were identified. In addition, the optical transmission and absorption spectra of ZnS thin film deposited at 300℃ and 400℃ were compared and the optical energy gaps of the thin films deposited at the two temperatures were found to be 3. 82eV and 3. 81eV, respectively. Such high-transmittance and uniform

关 键 词：射频磁控溅射法 ZNS薄膜 单带差超晶格 太阳电池 

分 类 号：TN304.25[电子电信—物理电子学]