高气压下氢化微晶硅薄膜的高速沉积  

On the high deposition rate of μc-Si:H thin films under high gas pressure

作　　者：申陈海[1] 卢景霄[1] 陈永生[1] 郭学军[1] 陈庆东[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052

出　　处：《真空》2010年第3期20-23,共4页Vacuum

基　　金：国家重点基础研究发展计划(批准号:2006CB202601)资助课题

摘　　要：利用甚高频等离子增强化学气相沉积(VHF-PECVD)制备了一系列微晶硅(μc-Si:H)薄膜。研究分析了功率密度、硅烷浓度和气体流量在较高沉积气压(500 Pa和600 Pa)下对薄膜生长速率、结晶状况和电学特性的影响。研究表明:在高压强条件下,硅烷浓度和气体流量对沉积速率影响显著,而功率密度影响较弱;高沉积速率生长的薄膜孵化层较厚;电学特性较好的薄膜位于非晶/微晶过渡区。经过工艺的初步优化,在高压强(600 Pa)条件下,使微晶硅薄膜的沉积速率提升到2.1 nm/s。A series of μc-Si：H thin films were deposited by VHF-PECVD.The effects of silane concentration,total flowrate and power density on the deposition rate,crystallization and electronic properties of μc-Si：H films were studied.The results showed that the effects of siliane concentration and total flowrate on the deposition rate under high pressure are stronger than on the power density,and the thin film prepared at high deposition rate has a thicker layer that tends to growing.It was found that the films with better photoelectronic properties lie in the zone where the amprphous state is transferring to microcrystalline state.With the preparation process optimized prelminarily,the deposition rate of μc-Si：H films under 600Pa can be increased up to 2.1nm/sec.

关 键 词：μc-Si:H VHF-PECVD 高速沉积 结晶状况 电学特性 

分 类 号：O484[理学—固体物理]