InP晶片表面优化处理及键合性质分析  

Optimal Surface Treatment of InP Surface and Analysis of Bonding Structure

作　　者：何国荣[1] 渠红伟[2] 郑婉华[2] 陈良惠[2] 

机构地区：[1]深圳信息职业技术学院电子通信技术系,广东深圳518029 [2]中科院半导体所纳米光电子实验室,北京100083

出　　处：《光学与光电技术》2010年第3期69-74,共6页Optics & Optoelectronic Technology

摘　　要：采用原子力显微镜(AFM)和X射线光电子能谱(XPS)对不同处理流程后的InP(100)表面粗糙度及化学成分进行测试分析,优选出C、O元素浓度较低,且表面均方根粗糙度影响较小的表面清洗方法。通过比较键合结构的薄膜转移照片可知,表面清洗后的干燥与除气步骤可较好地去除键合界面中的空洞和气泡,从而提高键合质量。键合结构的电子显微镜(SEM)照片,X射线双晶衍射曲线(XRD)及Ⅰ-Ⅴ测试分析表明键合结构具有良好的机械、晶体及电学性质。Surface micro-roughness and chemical properties are investigated by atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） measurements for different chemical treatments of InP surface. Optimal cleaning procedure with low concentration of C and 0 element and small micro-roughness surface is determined to realize GaAs/InP bonding by comparison of results. Microscope pictures of transferred film surface show that surface drying and outgassing steps are effective to get rid of void and bubble of bonding interface, thus improved bonding quality. Bonding results are then evaluated by scanning electronic microscope （SEM） pictures, X-ray diffraction （XRD） measurements and electrical properties of n-GaAs/n-InP bonded structure.

关 键 词：键合 X射线光电子能谱 微观粗糙度 薄膜转移 X射线双晶衍射 

分 类 号：TN36[电子电信—物理电子学]