RIE对Ge衬底上制备亚波长结构形貌的影响  

Influence of RIE Process Parameters on the Morphology of Sub-Wavelength Structure on Ge Substrate

作　　者：郑倩[1] 刘正堂[1] 李阳平[1] 张淼[1] 车兴森[1] 

机构地区：[1]西北工业大学材料学院,西安710072

出　　处：《半导体技术》2010年第6期527-530,共4页Semiconductor Technology

基　　金：航空科学基金资助项目(2008ZE53043)

摘　　要：利用反应离子刻蚀(RIE)技术在Ge衬底上制备宽波段亚波长结构,研究了不同SF6/O2比例条件下在不同刻蚀时间、压强和射频功率对结构形貌及刻蚀深度的影响,并用SEM对刻蚀图形的表面形貌进行了观察。结果表明,SF6易与衬底发生反应,生成挥发性产物,加速了刻蚀速度。O2的加入生成的钝化膜会增强各向异性刻蚀,减慢了刻蚀速度,对衬底有刻蚀保护作用。增加压强可以增大刻蚀深度,但增加射频功率,刻蚀深度先是增加,达到一定值后下降。选择合适的工艺参数可以获得较为理想的金字塔形结构。Sub-wavelength structures were prepared on Ge substrate using reactive ion etching（RIE） technology.Influences of SF6/O2 ratio,etching time,working gas pressure and RF power on the etching depth are studied systematically.Surface topography of the etched patterns is observed by using SEM.Results show that SF6 reacts preferentially with the substrate to produce volatile products,accelerating the etching rate of the substrate and the removal rate of the photoresist.Additive O2 enhances the anisotropic etching,slowing down the etching rate and protecting the substrate by generating an oxide layer.Moreover,the increase of the pressure can increase the etching depth,but an increase of the RF power leads to initially an increase and a decrease of the etching depth after a certain value.Pyramid-shaped structures were achieved under optimized process parameters.

关 键 词：反应离子刻蚀 亚波长结构 挥发性产物 钝化膜 各向异性 

分 类 号：TN304.11[电子电信—物理电子学] TN405.983