AAO模板的湿法刻蚀研究  

Study of Wet Etching of AAO Template

作　　者：胡国锋[1] 张海明[1] 邸文文[1] 李育洁[1] 高波[1] 朱彦君[1] 

机构地区：[1]天津工业大学理学院,天津300160

出　　处：《半导体技术》2010年第6期531-533,576,共4页Semiconductor Technology

基　　金：天津市自然科学基金资助项目(09JCYBJC04400)

摘　　要：利用二次阳极氧化法制备多孔氧化铝(AAO)模板,然后用NaOH、磷铬酸和不同质量分数的H3PO4等溶液,对AAO模板进行湿法刻蚀。研究了刻蚀时间与AAO模板质量减少之间的变化关系。结果表明,质量分数为3%的H3PO4溶液是最为温和的刻蚀剂,它在刻蚀过程中AAO模板的质量减少跟刻蚀时间呈较好的线性关系。SEM测试表明,刻蚀后的AAO模板表面存在大量的氧化铝纳米线,它们是在刻蚀的过程中产生的,并影响着刻蚀速率。通过调节刻蚀时间,可实现对AAO模板的精确可控刻蚀,这对制备纳米器件具有重要意义。The highly ordered anodic aluminum oxide（AAO） template was prepared with two-step anodization.The AAO template was carried out by wet etching process using a mixture solution of NaOH,H3PO4 and H2CrO4 and H3PO4.The relationship between mass loss of AAO template and etching time was studied.The results indicate that 3%（mass fraction） H3PO4 is a more mild and effective etchant compared with these etchants,and the mass loss appears linear relationship with etching time.SEM investigations shows that alumina nanowires are obtained with high yield by etching AAO template.And the growth of alumina nanowires is closely related to the etching time.It is of great significance in the fabrication of the nanodevice to achieve the precise controlled etching of AAO template by tuning the wet etching time.

关 键 词：多孔氧化铝 湿法刻蚀 磷酸 氧化铝纳米线 

分 类 号：TN305.7[电子电信—物理电子学]