一款超高压LDMOS管的物理建模  

Super High Voltage Physical Model of LDMOS Device

作　　者：程东方[1,2] 汪维勇[1,2] 易志飞[1,2] 沈伟星[1,2] 

机构地区：[1]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [2]上海大学微电子研发中心,上海200072

出　　处：《半导体技术》2010年第6期538-541,共4页Semiconductor Technology

基　　金：上海市国际科技合作项目(07SA03)

摘　　要：借助二维数值模拟软件ATHENA和ATLAS,研究分析了一款耐压为700 V的外延型LDMOS管的工作特性。按其工作机制,提出了用一个MOST和两个JFET有源器件构建成可用于电路仿真的LDMOST宏模型,并在电路仿真器HSPICE上验证了该宏模型的正确性;证明了LDMOST输出曲线中的准饱和特性源自寄生JFET的自偏置效应;采用参数提取软件UTMOSTⅢ,提取了相应的参数;给出了该LDMOST开关延迟时间的表达式和相关模型参数的提取方法等。所得结论与实测结果基本吻合。The operating characteristics of 700 V epitaxial lateral double diffused MOSFET（LDMOST）are investigated with 2D numerical simulator ATLAS and ATHENA.According to the physical working mechanism of this device,one MOST and two JFETs were adopted to build the physical model of LDMOST.The correctness of this model was proved with the circuit simulator HSPICE.Also,the quasi-saturation characteristic of the LDMOST,which adapted from the self-biased effect of the parasitic JFET was proved.Based on these facts,a sub-circuit model was used by the concept of macro model.And parameters of it were extracted by using parameter extraction software UTMOSTⅢ.Meanwhile,the switch delayed expressions of the device and the extraction methods for the LDMOST physical model parameters were given out.All the results are consistent with the measured data.

关 键 词：LDMOS 宏模型 准饱和效应 物理模型 

分 类 号：TN402[电子电信—微电子学与固体电子学]