适于毫米波应用的新型MEMS实时延时线(英文)  

Novel MEMS-Based True Time Delay Linefor Millimeter-Wave Applications

作　　者：梁亚平[1] 孙玲玲[1] 

机构地区：[1]杭州电子科技大学电子信息学院微电子CAD所,杭州310018

出　　处：《微纳电子技术》2010年第6期357-361,380,共6页Micronanoelectronic Technology

摘　　要：介绍了两种适于毫米波应用的RF MEMS实时延时线的设计。首先,在设计中采用了一种新颖的RF MEMS拓宽调节范围的变容器结构,得到了最大变容比为5.39的在片测试结果。其工艺设计基于表面微机械工艺,采用了由5个掩模版组成的工艺流程。然后,在RF MEMS变容器设计的基础上,完成了用于原理论证的Ka波段RF MEMS实时延时线的仿真设计、工艺流片和在片测试。Ka波段RF MEMS实时延时线的在片测试结果显示,在28GHz时处于下降状态的插入损耗为-2.36dB;两端口在28GHz时的回波损耗都小于-15dB,而在5～40GHz的整个测试频率范围内的回波损耗都小于-10dB。在Ka波段RF MEMS实时延时线设计基础上,60GHz RF MEMS实时延时线的仿真设计已经完成并准备投片。Two RF MEMS-based true time delay lines for millimeter-wave applications were presented. First, a novel RF MEMS extended tuning range varactor structure was employed and on-wafer measurement results obtained a maximum capacitance ratio of 5.39. A five-mask fabrication process was designed by using surface micromachining technology. Based on the RF MEMS varactor design, the proof-ofprinciple Ka-band RF MEMS true time delay line was designed, fabricated and tested. The on-wafer measurement results show that, for the Ka-band RF MEMS-based true time delay line, the insertion loss at 28 GHz is - 2.36 dB in the down-state and the return losses at the two ports are both below - 15 dB at 28 GHz and below - 10 dB over the entire tested frequency range of 5 - 40 GHz. Based on the Ka-band RF MEMS true time delay line design, a 60 GHz RF MEMS true time delay line design has been finished and is ready to be fabricated.

关 键 词：实时延时线 微机械系统 毫米波 相控阵天线系统 在片测试 

分 类 号：TN703[电子电信—电路与系统] TN820.15