采用移相掩模技术制作深亚微米“T”型栅  

Fabrication of Deep-Submiron T-Shaped Gate by Phase-Shifting Mask Technology

作　　者：杨中月[1] 付兴昌[1] 宋洁晶[1] 孙希国[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第6期372-375,共4页Micronanoelectronic Technology

摘　　要：介绍了在GaAs器件制作中,如何提高光刻细线条加工能力、制作深亚微米"T"型栅的工艺技术。该技术采用投影光刻和负性化学放大光刻胶,制作出0.18μm的"T"型栅GaAs PHEMT器件,栅光刻工艺采用了分辨率增强移相掩模技术。根据曝光工具简单介绍了当前GaAs器件中"T"型栅主要制作方法,讨论了"T"型栅制作中所使用的移相掩模原理以及该技术应用于GaAs器件制作的优势,并介绍了工艺制作过程。给出了所制作的"T"型栅扫描电镜剖面照片,并进一步试验、讨论和分析了采用该种移相掩模版进行光刻时所遇到的主要困难及解决方向。The process to enhance the capability of photolithography fine lines for GaAs devices and fabricate the very narrow T-shaped gate was described. The T-shaped gate with length of 0.18 μm was fabricated for GaAs PHEMTs with stepper and negative chemically amplified photoresist. The phase shift mask was used in the photolithography process. And the fabrication methods of T-shaped gate were briefly introduced according to different exposure tools. The theory and advantages of the phase shift technology to fabricate GaAs devices were given. The main process to fabricate the 0.18 μm GaAs PHEMTs was described, the SEM photo and test results of the device were presented. Then the main difficulty in the T-shaped gate photolithography was discussed and the direction of solutions was proposed.

关 键 词：深紫外光刻 负性化学放大胶 “T”型栅 移相掩模技术 分辨率增强技术 砷化镓PHEMT 

分 类 号：TN405.7[电子电信—微电子学与固体电子学]