对具有结终端保护的4H-SiC肖特基势垒二极管的研究  

Study on 4H-SiC schottky barrier diode with juntion termination techniques

作　　者：张发生[1,2] 李欣然[2] 

机构地区：[1]中南林业科技大学计算机与信息工程学院,湖南长沙410004 [2]湖南大学电气与信息工程学院,湖南长沙410082

出　　处：《中南林业科技大学学报》2010年第5期179-183,共5页Journal of Central South University of Forestry & Technology

基　　金：湖南省高等学校科学研究项目(08C942);湖南省科技厅科技项目(2008FJ3102)

摘　　要：在对4H—SiC高压肖特基势垒二极管进行了理论分析的基础上,利用仿真软件ISE10.0对具有结终端保护的4H—SiC高压肖特基势垒二极管耐压特性进行了模拟仿真计算,并取得了很多有价值的计算结果。利用平面制造工艺,结合仿真提取的参数,试制了4H—SiC肖特基势垒二极管。实验测试结果表明,仿真计算的结果与实际样品测试的数据一致性较好,实测器件反向耐压值已达到1 800 V。In this paper,the 4H-SiC high voltage schottky barrier diodes（SBD） reverse characterization with junction termination technique are simulated using a device simulator ISE10.0 on the basis of the theoretical analysis for 4H-SiC high voltage SBD,and a lot of valuable results are obtained.4H-SiC SBD with junction termination technique was fabricated according to the simulation analytical parameters by use of planar process.The applied results show that the a good consistency between simulation and experimental data are achieved.The results show that the 4H-SiC SBD with optimized JTE edge termination can accomplish near ideal breakdown voltage of 1800V.

关 键 词：肖特基势垒二极管 结终端技术 模拟 反向耐压 工艺 

分 类 号：TN311[电子电信—物理电子学]