AlN基稀磁半导体的研究进展  

Recent Progress of AlN-based Diluted Magnetic Semiconductor

作　　者：王腊节[1] 聂招秀[2] 

机构地区：[1]南昌大学共青学院工程技术系,九江332020 [2]重庆大学数理学院,重庆400030

出　　处：《材料导报（纳米与新材料专辑）》2010年第1期304-306,329,共4页

摘　　要：主要介绍了AlN基稀磁半导体(DMS)的研究进展,包括其发展过程、AlN基DMS的研究现状,描述了理想的AlN基DMS材料应具备的特征,并展望了其未来的研究方向。The recent progress of AlN-based diluted magnetic semiconductor is mainly reviewed, including the developing course of DMS and recent research of AlN-based DMS. An outlook on ideal diluted magnetic semiconductors are also concluded and its future is looked ahead.

关 键 词：ALN 稀磁半导体 居里温度 掺杂 过渡元素 

分 类 号：TN304.7[电子电信—物理电子学]