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作 者:赵莉娟[1,2,3] 庞起[2,3] 杨世和[3,4] 葛惟昆[2,3] 王建农[2,3]
机构地区:[1]东华大学应用物理系,上海201620 [2]香港科技大学物理系 [3]香港科技大学纳米研究所,中国香港 [4]香港科技大学化学系
出 处:《红外与毫米波学报》2010年第3期167-171,179,共6页Journal of Infrared and Millimeter Waves
基 金:Supported by the Research Grant Council of Hong Kong(HKUST6069/02P,F-HK18/03T);the research fund of Donghua University
摘 要:主要研究了高产率CdSe四脚状纳米颗粒的时间分辨光学性质.结果表明在氯仿溶液中和均匀涂布在绝缘硅片上的CdSe四脚状纳米颗粒室温下的光致发光(PL)衰减曲线均可以用一个双e指数的衰减函数来拟合,荧光寿命短的部分对应快衰减,而寿命长的部分对应慢衰减.通过分析荧光寿命与PL峰的能量的关系可知,快衰减和慢衰减分别来自于非局域态载流子和局域态载流子的贡献.通过比较溶液中和硅片上两种情况的快衰减和慢衰减系数的比值,得出结论:CdSe四脚状纳米颗粒的PL快衰减和慢衰减分别来源于纳米颗粒中非局域态和颗粒表面缺陷中局域态的贡献.Time resolved optical properties of CdSe tetrapod nanocrystals where studied. The results show that the decays of photoluminescenee (PL) intensities for tetrapods in solution and on insulating silicon substrate can be well fitted by a hi-ex- ponential function. Based on the emission-energy dependence of carrier lifetimes, the fast and slow PL decays of CdSe tet- rapods are attributed to the recombination of delocalized carriers and the localized carriers in the localized states, respec- tively. By comparing the amplitude ratio of the fast-decay component to the slow-decay component for samples in solution with those on silicon, it is concluded that the slow PL decay is associated with the recombination of localized carriers in the surface defects of CdSe tetrapods.
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