中频磁控溅射AlN薄膜的电学性能研究  

Electrical Properties of AlN Films Deposited by Middle Frequency Magnetron Sputtering

作　　者：贾贞[1] 翁卫祥[1] 袁军林[1] 张杰[1] 李昱[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《光电子技术》2010年第2期122-126,共5页Optoelectronic Technology

基　　金：国家"863"计划重大专项(2008AA03A313);福建省重大科技专项(2004HZ01-2)

摘　　要：利用中频反应磁控溅射在玻璃衬底上沉积了不同溅射功率的AlN薄膜。采用X射线衍射仪、原子力显微镜和电击穿场强测试系统研究了薄膜的结构和电学性能,并对该介质薄膜的导通机制进行了分析。结果表明,所制备的薄膜呈非晶态,5kW溅射功率下制备的薄膜具有较好的表面结构,并具有较高的耐击穿场强,约为2.1MV/cm;结合理论分析发现,AlN在不同的场强条件下以某一种导通作为主要的导通机制:低场强区服从欧姆定律,随着场强升高,在不同的阶段分别以肖特基效应,普尔-弗兰凯尔效应和F-N效应为主。Aluminum nitride thin films were deposited on glass substrates at different sputtering powers by medium-frequency reactive magnetron sputtering. The structure and electrical properties of A1N thin films were characterized by X-ray diffraction, atomic force microscopy and electrical breakdown field strength measurement system, and the conduction mechanisms of these dielectric films were analyzed. The result indicates that the prepared thin films are amorphous, and the thin film deposited at 5 kW sputtering power has better surface and higher breakdown field strength which is 2.1 MV/cm. It is found that A1N thin films have different conduction mechanisms under conditions of various field strengths combined with theories. The conduction mechanism follows Ohm＇s law in the low-field area; then as the field strength increases, the Schottky Effect, Poole-Fulankaier Effect and F-N Effect are respectively regarded as the main mechanism at different stages.

关 键 词：ALN薄膜 中频反应磁控溅射 电学性能 导通机制 

分 类 号：O484[理学—固体物理]