Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser  

Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

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作  者:李娟 丁思维 姚颖 罗翀 孟志国 吴春亚 熊绍珍 张志林 郭海诚 

机构地区:[1]Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology [2]Key Laboratory of Opto-electronic Information Science and Technology(Nankai University and Tianjin University),Ministry of Education [3]Institute of Photo-electronics,Nankai University [4]Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University [5]Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology

出  处:《Optoelectronics Letters》2010年第4期288-290,共3页光电子快报(英文版)

基  金:supported by the National High Technology Research and Development Program of China (No.2008AA03A335);the National Natural Science Foundation of China (No. 60437030);the Key Laboratory of Advanced Display and System Applications (Shanghai University),Ministry of Education of China (No.P200903)

摘  要:The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

关 键 词:YAG激光器 性能增强 氢钝化 结晶 双频率 聚硅 激光退火 多晶硅 

分 类 号:TN248[电子电信—物理电子学]

 

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