物理汽相传输法生长掺钒碳化硅单晶新鲜表面的实验研究  

The study on the As-grown surface of vanadium-doped SiC growth by PVT

作　　者：王香泉[1] 洪颖[1] 章安辉[1] 冯玢[1] 郝建民[1] 严如岳[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《现代仪器》2010年第3期75-76,79,共3页Modern Instruments

摘　　要：采用SEM观察物理汽相传输(PVT)法生长掺钒SiC单晶新鲜表面时,发现有特定形状的析出相,经SIMS、SEM能谱(EDX)、XRD、台阶仪综合分析,确定析出相的主要成分是钒,且是凸起的,推断其在单晶生长降温过程中产生。We observed some shaped tiny crystal grains on the as-grown surface of V-doped SiC grown by PVT process. By using various methods, such as SIMS, EDX, XRD and surface morphology some results can be ac- quired： the vanadium is a main element of the grains, the grains are higher than the matrix on morphology and they should grow during cooling procedure.

关 键 词：SIC 掺钒 PVT 新鲜表面 SEM SIMS 

分 类 号：O78[理学—晶体学]