退火温度对Al、Cu、Ni诱导Si薄膜晶化进程的影响  

Effect of annealing temperature on crystallization process of Al,Cu,Ni induced Si films

作　　者：蒋百灵[1] 李洪涛[1] 蔡敏利[1] 苗启林[1] 杨波[1] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《金属热处理》2010年第6期33-36,共4页Heat Treatment of Metals

基　　金：陕西省教育厅科学技术研究计划(09JK623);西安理工大学优秀博士学位论文研究基金(101-210905)

摘　　要：基于金属诱导晶化方法,利用直流磁控溅射离子镀技术制备了Al-Si、Cu-Si和Ni-Si薄膜。采用真空退火炉和X射线衍射仪于不同温度下对样品进行了退火试验并分析了退火后薄膜物相结构的变化规律。结果表明,Al诱导Si薄膜晶化的效果最好,Cu次之,Ni诱导Si薄膜晶化的效果较差;Al可在退火温度为400℃时诱导Si薄膜晶化,且随退火温度的升高Si的平均晶粒尺寸增大;Cu-Si薄膜的内应力较大和Ni-Si薄膜中Ni/Si界面处难以形成NiSi是Cu、Ni诱导Si薄膜晶化效果较差的主要原因。Based on metal-induced crystallization method,Al-Si,Cu-Si and Ni-Si films were prepared by DC magnetron sputter ion plating technique.Annealing experiment under different temperature and bulk phase structure of the films after annealing was carried by vacuum annealing furnace and X-ray diffraction（XRD）.The results show that the effect of Al induced crystallization of Si film is the best,and then is Cu,the last is Ni.After annealing at 400 ℃,crystallites is found in Si film by Al induced and the average crystal size is increased at higher temperature.High internal stress of Cu-Si film and hard to form the NiSi2around Ni/Si interface in the Ni-Si film are the main reasons of that the effect of Cu and Ni induced crystallization of Si films are worse.

关 键 词：硅薄膜 退火 晶化过程 扩散 

分 类 号：TM914.4[电气工程—电力电子与电力传动]