MOSFET集约模型的发展  

Development of MOSFET Compact Models

作　　者：伍青青[1] 陈静[1] 罗杰馨[1] 肖德元 王曦[1] 

机构地区：[1]中国科学院微系统与信息技术研究所,上海200050

出　　处：《固体电子学研究与进展》2010年第2期192-198,共7页Research & Progress of SSE

摘　　要：MOSFET集约模型作为连接半导体生产商与电路设计者之间的桥梁,是半导体行业不可或缺的一环。随着对器件物理效应的不断深入了解,以及不断满足电路设计新要求,MOSFET集约模型经历了长时间的发展。从模型的基础出发,介绍了基于阈值电压Vth、反型层电荷Qi和表面势Φs这三类MOSFET集约模型的发展历程及其主要特征。MOSFET compact models,which link the foundries and the circuit designers,are indispensable in semiconductor industry.They have been developed for decades with more insight in physical effects and more demand in circuit design.From the basis of compact models,the developments and the characteristics of the threshold based models,the charge based models and the potential based models are introduced.

关 键 词：场效应晶体管 集约模型 BSIM模型 HiSIM模型 PSP模型 

分 类 号：TN386.1[电子电信—物理电子学]