GaN基功率LED高低温特性研究  

The Characteristics of GaN Based LED at Low and High Temperature

作　　者：贾学姣[1] 郭伟玲[1] 高伟[1] 裘利平[1] 李瑞[1] 毛德丰[1] 沈光地[1] 

机构地区：[1]北京工业大学,光电子技术省部共建教育部重点实验室,北京100124

出　　处：《固体电子学研究与进展》2010年第2期304-307,共4页Research & Progress of SSE

基　　金：国家863项目(2009AA03A1A3,2008AA03A192);国家重大专项(2008ZX10001-014);科技部技术创新基金项目(09C26221100138)

摘　　要：首次对自制的GaN基大功率白光和蓝光发光二极管在-30~100°C的温度下进行了在线的光电特性测试,对两种不同LED的正向电压、相对光强、波长、色温等参数随温度变化的关系进行了数据曲线拟合,对比分析了参数变化的原因,以及这些变化对实际应用的影响。结果表明,温度对大功率LED的光电特性有很大影响,通过对比发现白光LED的部分光参数随温度的变化不仅与GaN芯片有关,同时受到荧光粉的影响。低温环境下,要考虑LED的正向电压升高和峰值波长蓝移对应用的影响;而高温条件下要考虑光功率降低和峰值波长红移对应用的影响。The high power GaN-based blue and white light emitting diodes（LEDs） are tested on line at temperatures from-30°C to 100°C.The measured data are fitted for the relationship between temperatures and the property of forward voltages,light relative intensity,wavelength,and color temperature of two different kinds of LEDs.The reasons of these property changes and their influence on the applications are also analyzed and compared with each other.The results show that temperature has great influence on the performances of high power GaN-based LEDs,and the performances of white LEDs at different temperatures also have some relations with yellow phosphors.For applications at low temperature,the forward voltage rising and the peak wavelength blue-shifting must be considered;and at high temperature,the light relative intensity decreasing and the peak wavelength red-shifting must be considered.

关 键 词：氮化镓 功率发光二极管 低温 正向电压 峰值波长 

分 类 号：TN312.8[电子电信—物理电子学]