基底负偏压对直流磁控溅射CrN薄膜择优取向及表面形貌的影响  

Effects of substrate negative bias voltages on preferred orientation and surface morphology of CrN films deposited by DC reactive magnetron sputtering

作　　者：谈淑咏[1] 张旭海[1] 李纪宏[1] 吴湘君[1] 蒋建清[1] 

机构地区：[1]东南大学材料科学与工程学院,江苏省先进金属材料高技术研究重点实验室,江苏南京211189

出　　处：《功能材料》2010年第6期1015-1018,共4页Journal of Functional Materials

基　　金：国家科技支撑计划资助项目(2007BAE15B05)

摘　　要：直流磁控溅射法制备不同基底负偏压下的CrN薄膜,采用XRD分析薄膜相结构,EDS分析薄膜表面成分,SEM观察薄膜表面形貌,并对偏压作用机制进行了探讨。结果表明,当Ar流量6ml/min、N2流量30ml/min时,在基底负偏压增大过程中,CrN薄膜始终由CrN相组成,但薄膜生长发生了(111)(-50V)向(200)(-125V)再向无明显择优生长(-225V)的转变。低偏压时,CrN薄膜[111]向[200]取向转变主要是轰击表面氮离子浓度增加导致;高偏压时,薄膜中Ar浓度大幅增长,高能离子长时间轰击破坏晶粒取向性,使薄膜呈无择优取向。同时,负偏压增加使薄膜表面形貌从具有棱角的不规则形状逐渐变为粒状结构,且晶粒逐渐细小。CrN films were prepared under different substrate negative bias voltages by DC magnetron sputtering.The preferred orientation,composition and surface morphology were explored by X-ray diffraction,EDS and SEM,respectively.The mechanism of bias voltages was also discussed.The results showed that the variation of bias voltages did not affect the phase composition of CrN films.However,when Ar and N2 flux were 6 and 30ml/min respectively,the preferred growth of CrN films changed from（111） to（200）,then no clear preferred growth with the increase of bias voltages from-50 to-225V.In addition,as negative bias voltages increased,surface morphology of CrN films also changed from irregular shape with angular structure to globular structure gradually and the grain size decreased.

关 键 词：基底负偏压 择优生长 表面形貌 直流磁控溅射 

分 类 号：TB3[一般工业技术—材料科学与工程] TG14[金属学及工艺—金属材料]