电子束反应蒸发技术生长Mo掺杂In_2O_3薄膜  

High mobility Mo-doped In_2O_3 thin films grown by electron beam vapor deposition

作　　者：韩东港[1] 陈新亮[1] 孙建[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电子薄膜器件与技术大津市重点实验室,光电信息技术科学教育部重点实验室,天津300071

出　　处：《光电子．激光》2010年第5期686-690,共5页Journal of Optoelectronics·Laser

基　　金：国家“973”重点基础研究资助项目(2006CB202602,2006CB202603);天津市应用基础及前沿技术研究计划资助项目(09JCYBJC06900);天津市科技攻关资助项目(06YFGZGX02100)

摘　　要：利用电子束反应蒸发技术,调制衬底温度200～350℃,详细研究了Mo掺杂In2O3(IMO,In2O3:Mo)薄膜的微观结构以及光电性能的变化。随着衬底温度增加,原子力显微镜(AFM)与扫描电子显微镜(SEM)图像均证明IMO薄膜表面趋于粗糙,透过率和Hall测试表明其光学和电学性能逐渐提高。在衬底温度为350℃时,获得薄膜最小电阻率为2.1×10-4Ωcm,载流子迁移率为34.2cm2/Vs,其可见光区及近红外区的平均透过率为78%。衬底温度为200℃时,薄膜表现为黑褐色,经分析X射线光电子能谱(XPS)结果认为与薄膜中钼的低价氧化有关,提高衬底温度可改善薄膜氧化状态。Microstructural,optical and electrical properties of molybdenum doped indiumoxide （IMO,In2O3：Mo） films prepared on glass substrates by electron beam deposition technique at different substrate temperature are investigated in detail.AFM images and SEM images prove that the surface of the IMO films becomes coarse,and transmittance and Hall measurement indicate that optical and electrical properties becomes better when the substrate temperature increases.The IMO film exhibites a low electrical resistivity of 2.1×10-4 Ωcm with an average optical transmittance of 78% in the visible and near-infrared region at a substrate temperature of 350 ℃.In addition,the IMO film deposited at the low substrate temperature of 200 ℃ is black brown,and XPS analysis shows that it is partially due to the oxided Mo.Increasing the sustrate temperature can contribute to ameliorate oxidation state of Mo in the IMO films.

关 键 词：电子束蒸发技术 Mo掺杂In_2O_3(IMO)薄膜 衬底温度 X射线光电子能谱(XPS) 

分 类 号：TN304[电子电信—物理电子学]