强激光场下非对称量子阱结构中子带间的跃迁  

Intersubband transition in an asymmetry quantum well under intense laser field

作　　者：那顺乌日图[1] 宫箭[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙呼和浩特010021

出　　处：《光电子．激光》2010年第7期1102-1105,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10847005);内蒙古自然科学基金资助项目(20080404MS0101)

摘　　要：选取Al0.3Ga0.7As/GaAs的非对称双量子阱结构,在有效质量近似条件下计入电子-电子相互作用所产生的Hartree势,采用转移矩阵方法研究了外加强激光场和电场作用下非对称双量子阱结构中子带间的跃迁和光吸收性质,并且详细讨论了外场对跃迁和吸收的影响。结果发现,通过调节高频激光场和电场强度,非对称双量子阱中子带间的吸收峰将发生蓝移或红移,并且吸收峰峰值也随之发生改变,高频激光场和电场对器件的光学和电学性质具有重要的影响,对电子态的进一步调控具有重要的意义。The effect of the electric field and intense laser field on the intersubband transition and optical absorption in an Al0.3Ga0.7As/GaAs asymmetric double quantum well is theoretically investigated by using the transfer matrix approach.The Hartree potential due to the electron-electron interaction is considered in our calculation.For intersubband transitions in an asymmetric double quantum well,the peaks of the absorption coefficient are found to be a blue or red shifted by tuning the intensity of the laser field and the applied electric field.It can be concluded that the intense laser field and external electric field have a considerable influence on the electronic and optical properties for an asymmetric double quantum well.

关 键 词：双量子阱 电场 激光场 光子跃迁 

分 类 号：O471.3[理学—半导体物理]