微型NiFe磁阻(MR)薄膜传感元件在反磁化过程中的钩形畴活动  

The Hooklike Domains Activities During Magnetization Reversal Process in Small Magnetoresistive Thin Film Elements

作　　者：余晋岳[1] 蔡炳初[1] 张明生[1] 章吉良[1] 赵小林[1] 周狄[1] 魏福林 

机构地区：[1]上海交通大学信息存储研究中心,上海200030 [2]国家教委应用磁学开放研究实验室,甘肃兰州730000

出　　处：《功能材料》1999年第1期15-17,共3页Journal of Functional Materials

摘　　要：从NiFe磁阻（Magneto－Resistive）薄膜传感元件的实际结构出发，全面观察和分析了它在难轴方向反磁化过程中磁畴结构的转变过程发现，由于实际元件是不规则形状的，特别是由于引线形状各向异性的影响，即使在传感器形状比（aspectratio）大于50：1时，传感器中仍然不是单畴的。实验中具体观察了从引线衍生到传感器有效区域的钩形畴活动和它的不可逆转变，说明它是产生Barkhausen跳跃的一个潜在的物理原因。这是过去文献中所未曾充分注意和研究过的。With regard to practical structure of elements, the transition process of magnetic domain structure during magnetization reversalalong hard-aixis in MR thin film sensitive elements has been observed and analysed in detail. It was found that even if aspeCt ratio of sensor was larger than 50: 1, it was not in the single domain state due to the influences of shape irregularity of element and shape anisotropyof leads especially. In this paper, the aCtivities of hooklike domains extending from leads to effective area of sensor and its irreversibletransition were Observed. It was shown that this was also the one of physical origins of Barkhausen jumps, and in literature up to now ithas not been noticed and investigated sufficiently.

关 键 词：传感元件 反磁化 磁畴 钩形畴 传感器 磁阻薄膜 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] O441.2[自动化与计算机技术—控制科学与工程]