用气液固相互反应方法生长线状硅晶研究  

Research on Silicon Crystal Wires Growth by Vapor-Liquid-Solid Reaction Method

作　　者：陆阳[1] 施毅[1] 刘建林[1] 汪峰[1] 顾书林[1] 朱顺民[1] 郑有[1] 

机构地区：[1]南京大学物理系,江苏南京210093

出　　处：《功能材料》1999年第1期31-32,共2页Journal of Functional Materials

摘　　要：以SiH4为生长气源，利用VLS（气相一液相一固相）互反应生长机制，在RT－CVD生长设备上通过向（111）硅衬底表面引入Au，生长出长达数个微米而直径小于1μm的垂直于衬底表面的线状晶体。对生长出的线状晶体作了扫描电镜观察，并分析讨论了生长的异常现象。We report a possible approach to fabricate quantum wires normal to the surface of the substrate by VLS (Vapor, Liquid & Solid)interreaction mechanism. The whole experimental process, which is similar to usual growth in CVD chambers in most steps, is distinguished by introducing liquid phase such as An-St eutectic in the groWth through plasma vaporation and heating in CVD chamber just before normal growth steps. Under the reasonable conditions (70℃ -- 750℃ and SiH4 3sccm), silicon whiskers trimly normal to the surfaceof the substtate are observed by SEM. Serveral interesting phenomena and results are also discussed and a conclusion drawn by foregoers is testified as well.

关 键 词：VLS生长机制 金硅合金 线状硅晶 真空微电子技术 

分 类 号：O782.9[理学—晶体学] TN104.3[电子电信—物理电子学]