CVD金刚石膜反应器内气相化学的理论研究进展  

Theoretical study progress of gas phase chemistry in CVD diamond film reactor

作　　者：安希忠[1] 李长兴[1] 刘国权[2] 沈峰满[1] 李友清[1] 

机构地区：[1]东北大学材料与冶金学院,辽宁沈阳110004 [2]北京科技大学材料科学与工程学院,北京100083

出　　处：《中南大学学报（自然科学版）》2010年第3期896-905,共10页Journal of Central South University:Science and Technology

基　　金：国家自然科学基金资助项目(59872003)

摘　　要：综述CVD金刚石膜沉积过程中反应器内气相化学的理论研究进展,阐述不同条件下反应器内的气相化学反应模型、反应机理及各种数值仿真方法,总结这些气相反应的选取及所对应的动力学机理。研究结果表明:CVD金刚石膜反应器内的气相化学是一个十分复杂的过程,与双碳组元相比,单碳组元对膜沉积的贡献较大,在组元C2H2,C2,CH3,C和CH中,决定膜生长的组元由具体操作条件而定。对CVD金刚石膜反应器内气相化学的研究结果不但可以为探讨膜生长机理的表面化学提供准确输入,还可为高效、优质膜的获得提供理论依据。The theoretical progress of gas phase chemistry in chemical vapor deposition （CVD） diamond film growth reactor was reviewed. The gas phase reaction model,reaction mechanism and all kinds of numerical simulation methods in different types of reactors and conditions were presented. Meanwhile,the choice of these gas reactions and the corresponding reaction kinetics were summarized as well. The results indicate that the gas phase chemistry in CVD diamond film reactor is a rather complicated process,compared with double-carbon species,single-carbon species create larger contributions on film growth. However,species such as C2H2,C2,CH3,C and CH play a dominant role on film growth depending on detailed processing conditions. On the whole,the research on gas phase chemistry in CVD diamond film reactor can not only provide accurate input for the surface chemistry of film growth mechanism,but also provide theoretical reference for the efficient acquisition of CVD diamond film with high quality.

关 键 词：金刚石膜 化学气相沉积 气相化学 

分 类 号：TB34[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]