AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition  

作　　者：毕志伟 冯倩 郝跃 王党会 马晓华 张进成 全思 许晟瑞 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,The School of Microelectronics,Xidian University [2]School of Materials Science and Engineering,Xi'an Shiyou University

出　　处：《Chinese Physics B》2010年第7期513-517,共5页中国物理B（英文版）

基　　金：supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191)

摘　　要：We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance voltage （C-V）curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbA10 on A1GaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbA10 can be considered to be a potential gate oxide comparable to other dielectric insulators.We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance voltage （C-V）curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbA10 on A1GaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbA10 can be considered to be a potential gate oxide comparable to other dielectric insulators.

关 键 词：ALGAN/GAN MIS-HEMT NbAIO HIGH-K 

分 类 号：TN32[电子电信—物理电子学]