GSMBE外延生长GeSi/Sip-n异质结二极管  

Growth of GeSi/Si p n Heterojunction Diode Materials by Gas Source MBE

作　　者：刘学锋[1] 王玉田[1] 刘金平[1] 李建平[1] 李灵霄[1] 孙殿照[1] 孔梅影[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1999年第4期287-291,共5页半导体学报（英文版）

基　　金：国家九五科技攻关项目

摘　　要：用气态源分子束外延（ＧＳＭＢＥ）法生长了掺杂ＧｅｘＳｉ１－ｘ／Ｓｉ合金并试制了ｐ－ｎ异质结二极管，Ｘ射线双晶衍射和二极管Ｉ－Ｖ特性表明，ＧｅｘＳｉ１－ｘ／Ｓｉ合金的完整性与异质结界面的失配位错是影响异质结二极管反向漏电的主要原因．通过控制ＧｅｘＳｉ１－ｘ／Ｓｉ合金的组分及厚度，我们获得了较高质量的ＧｅｘＳｉ１－ｘ／Ｓｉｐ－ｎ异质结二极管材料，其反向电压为－５Ｖ时，反向漏电流密度为６．１μＡ／ｃｍ２．Abstract Ge x Si 1- x /Si p n heterojunction diode materials have been successfully grown by gas source MBE. It is found that the Ge x Si 1- x alloys crystalline qualities and the misfit dislocations in the hetero interfaces are of crucial influence on the reverse leakage current. High quality I V character of the diodes can be obtained by adjusting and optimising the alloy thickness and Ge molar fractions. A reverse leakage current density of 6 1μA/cm 2 is observed at -5V.

关 键 词：P-N结 异质结二极管 GSMBE 外延生长 

分 类 号：TN304.054[电子电信—物理电子学] TN313.2