GaN蓝光二极管杂质发光的近场光谱研究  

Near Field Spectroscopy Study of Impurity Light Emission in GaN Blue Diode

作　　者：凌勇[1] 周赫田[1] 朱星[1] 黄贵松 党小忠 张国义[1] 

机构地区：[1]北京大学物理系

出　　处：《Journal of Semiconductors》1999年第4期341-345,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：运用近场光谱方法研究了在蓝宝石衬底上用低压ＭＯＣＶＤ方法外延生长的ＧａＮ蓝光二极管的杂质发光光谱．研究结果表明近场光谱能够给出样品表面微区空间分辨的局域光谱信息，为研究样品表面微观发光机理提供了一个有力的手段．对近场光谱中各发光峰的强度随注入电流（电压）变化曲线的研究结果揭示出ＧａＮ蓝光二极管的能带中的施主能级，在ＧａＮ蓝绿光二极管的发光中和受主深能级同样都起着重要的作用．Abstract Using near field spectroscopy method, we have studied the electro emission spectrum of GaN blue diode fabricated on sapphire substrate by using low pressure MOCVD exitaxy technique. The results show that the near field spectroscopy can provide spatially resolved local spectrum of the sample surface and hence provide a new technique to study the mechanism of light emission at nanometer scale. The dependence of light emission intensities vs. injection currents in near field spectra reveals the donor levels of the energy bands in GaN blue diode, the donor levels play equally important roles as the acceptor deep levels in the light emission process of GaN blue green diodes.

关 键 词：氮化镓 蓝光二极管 外延生长 近场光谱 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054