大功率SiC MESFET内匹配技术及测试电路研究  

Study on High Power Internally-Matched SiC MESFET and Tested Circuits

作　　者：默江辉[1] 王丽[2] 刘博宁[3] 李亮[1] 王勇[1] 陈昊[1] 冯志红[1] 何庆国[1] 蔡树军[1] 

机构地区：[1]专用集成电路国家级重点实验室,石家庄050051 [2]国防科技信息研究中心,北京100028 [3]河北大学工商学院实验管理科,河北保定071002

出　　处：《半导体技术》2010年第7期658-660,668,共4页Semiconductor Technology

基　　金：重点实验室基金(914A08050509D223)

摘　　要：采用管壳内匹配及外电路匹配相结合的方法,成功制作四胞合成大功率高增益SiCMESFET。优化了芯片装配形式,采用内匹配技术提高了器件输入、输出阻抗。优化了测试电路结构,成功消除了输入信号对栅极偏置电压的影响,提高了电路稳定性。四胞器件在脉宽为300μs、占空比为10%脉冲测试时,2 GHzVds=50 V脉冲输出功率为129 W(51.1 dBm),线性增益为13.0 dB,功率附加效率为31.4%。High power SiC MESFETs with internally-matched circuits was fabricated.The impendence was increased by using the internally-matched circuit.The test circuit was optimized to eliminate the effect which the input signal has on the Vgs.The device with 20 mm×4 gate-width shows a pulsed output power of 129 W（51.1 dBm）with a linear gain of 13.0 dB and a power added efficiency of 31.4% at 2 GHz Vds=50 V and pulsed condition of 300 μs pulse width,10% duty cycle.These are the significant results up to now in China.

关 键 词：SiCMESFET 内匹配 大功率 

分 类 号：TN325[电子电信—物理电子学] TN386